David Dubbink, UTwente

Title: Epitaxial growth of Pb(Zr1-xTix)O3 films on GaN
Session: Tuesday 6 October, 11:30


The integration of Pb(Zr1-xTix)O3 (PZT) with III-V semiconductors such as GaN has attracted great deal of attention in science and industry community. GaN has many potential applications such as field effect transistor in high power and high frequency devices. In this respect, PZT possesses favorable dielectric and ferroelectric properties. However, the integration of these two materials has been limited because of the different crystal structures and large lattice mismatch. By achieving epitaxial MgO buffer layer on GaN-Si with pulsed laser deposition, we are able to obtain epitaxial growth of PZT on MgO-buffered GaN. The thickness of the MgO can be lowered down to single monolayers while maintaining the high quality and good properties of epitaxial PZT films, which enable practical applications for high power FET's and non-volatile ferroelectric controlled electronics devices. Our work paves a path toward the application of the high performance of PZT integrated with III-V semiconductors.





 to be announced


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